Book and thesis
Papers
SEM observation and analysis of InGaN/GaN multiple quantum well structure using obliquely polished sample MICROSCOPY 66 (2),pp.131-135 2017/04
Papers
A simple way to obtain backscattered electron images in a scanning transmission electron microscope MICROSCOPY 63 (4),pp.333-336 2014/08
Papers
Mapping of minority carrier lifetime distributions in multicrystalline silicon using transient electron-beam-induced current JOURNAL OF ELECTRON MICROSCOPY 61 (5),pp.293-298 2012/10
Papers
Determination of Piezoelectric Fields Across InGaN/GaN Quantum Wells by Means of Electron Holography JOURNAL OF ELECTRONIC MATERIALS 39 (6),pp.815-818 2010/06
Papers
Growth and properties of semi-polar GaN on a patterned silicon substrate JOURNAL OF CRYSTAL GROWTH 311 (10),pp.2867-2874 2009/05
Papers
EBIC imaging using scanning transmission electron microscopy: experiment and analysis JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 19,pp.S324-S327 2008/12
Papers
Electron-beam-induced-current investigation of GaN/AlGaN/Si heterostructures using scanning transmission electron microscopy JOURNAL OF ELECTRON MICROSCOPY 56 (4),pp.141-144 2007/08
Papers
Application of electron holography to the determination of contact potential difference in an AIGaN/AIN/Si heterostructure JOURNAL OF ELECTRON MICROSCOPY 56 (2),pp.37-42 2007/04
Papers
Defect structure in selective area growth GaN pyramid on (111)Si substrate APPLIED PHYSICS LETTERS 76 (19),pp.2701-2703 2000/05
Papers
Transmission electron microscopy study of selective area growth of GaN on (111)Si using AlGaN as an intermediate layer Proc. International Workshop on Nitride Semiconductors 2000, Nagoya 2000
Papers
Characterization of etch pits and correlated defects in ZnSe/(001)GaAs MICROSCOPY RESEARCH AND TECHNIQUE 43 (6),pp.518-519 1998/12
Papers
Photochemical etching technique for preparing high-quality TEM samples of n-type compound semiconductors Journal of Electron Microscopy,pp.129 1997
Papers
XTEM sample preparation technique for n-type compound semiconductors using photochemical etching MICROSCOPY RESEARCH AND TECHNIQUE 35 (4),pp.363-364 1996/11
Papers
Transmission electron microscopy study of InGaAsP/InGaP thin-layer structure grown by liquid phase epitaxy JOURNAL OF CRYSTAL GROWTH 166 (1-4),pp.334-338 1996/09
Papers
DETECTION SYSTEM FOR FAST STEM ELEMENTAL MAPPING USING PARALLEL EELS WITH A MODERATE-SCALE DETECTOR MICROBEAM ANALYSIS,pp.299 1994
Papers
Electron Microscope Study of Modelated Structures in LPE-Grown InGaAsP Epitaxial Layers Lattice Matched on (001) GaAs Electorn Microscopy,pp.617 1994
Papers
GROWTH AND CHARACTERIZATION OF INGAAS BULK CRYSTALS GROWN BY LIQUID-PHASE ELECTRO-EPITAXY JOURNAL OF CRYSTAL GROWTH 128 (1-4),pp.562-566 1993/03
Papers
RAMAN SCATTERING OF InGaAsP LATTICE-MATCHED TO GaAs IN THE REGION OF IMMISCIBILITY JAPANESE JOURNAL OF APPLIED PHYSICS,pp.2718 1993
Papers
GROWTH OF InGaP EPITAXIAL LAYERS BY LIQUID PHASE ELECTRO-EPITAXY JOURNAL OF CRYSTAL GROWTH,pp.115 1991
Papers
BEHAVIOR OF ANION VACANCY INx Ga1-x Asy P1-y GROWN ON (111)A AND (100) GaAs JOURNAL OF CRYSTAL GROWTH,pp.103 1990
Papers
EFFECTS ON A1 ADDITION IN LIQUID PHASE EPITAXY OF InGaP ON (111)A GaAs SUBSTRATES RECORD OF ALLOY SEMICONDUCTOR PHYSICS AND ELECTRONICS SYMPOSIUM 1990
Papers
DEEP LEVELS IN Inx Ga1-x Asy P1-y GROWN ON (100) GaAs BY LPE SEMICONDUCTOR SCIENCE AND TECHNOLOGY,pp.4 1989
Papers
ELECTRON MICROSCOPE STUDY OF MODULATED STRUCTURES AND HETEROINTERFACES IN LPE-GROWN InGaAsP LAYERS LATTICE-MATCHED ON GaAs JOURNAL OF CRYSTAL GROWTH,pp.98 1989
Papers
LIQUID PHASE EPITAXY GROWTH OF InGaP/InGaAsP MULTIPLE THIN LAYERS ON (111)A GaAs SUBSTRATES JOURNAL OF CRYSTAL GROWTH,pp.68 1989
Papers
A VERIFICATION OF IMMISCIBILITY IN InGaAsP QUATERNARY ALLOYS JOURNAL OF CRYSTAL GROWTH,pp.92 1988
Papers
EFFECTS OF LATTICE MISMATCH BETWEEN EPITAXIAL LAYER AND SUBSTRATE ON IMMISCIBILITY OF InGaAsP/GaAs LPE LAYERS JOURNAL OF CRYSTAL GROWTH,pp.87 1988
Papers
THE INITIAL STAGE OF LPE GROWTH OF InGaAsP ON GaAs IN THE REGION OF IMMISCIBILITY JOURNAL OF CRYSTAL GROWTH,pp.79 1986