Book and thesis
Books
Trends in Applied Spectroscopy Vol.9 Steady-State Photo-Capacitance Spectroscopy Investigation of Carbon-Related Deep-Level Defects in AlGaN/GaN Hetero-Structures Grown by MOCVD (Co-authored) 2013
Books
Solar Cells - New Aspects and Solutions Transparent Conducting Polymer/Nitride Semiconductor Heterojunction Solar Cells (Co-authored) 2011
Books
Recent Research Developments in Materials Science Vol. 7 Visible-Light Sensitivity in N-Doped ZnO Films (Co-authored) 2007
Books
Recent Research Developments in Applied Physics Vol. 8 Ion-Implantation Doping and Gate Insulators for GaN Power Devices 8 (Co-authored) 2006
Papers
Plasma-assisted annealing of Pt-doped rutile TiO2 nanoparticles for enhanced decomposition and bacterial inactivation under general lighting J. Vac. Sci. Technol. B 42, 012203 (2024) 42,pp.012203 (Co-authored) 2024
Papers
Bacterial Inactivation of Pt-doped Rutile TiO2 Nanoparticles Annealed with Low-Temperature O2 Plasma Proceedings of International Symposium of Dry Process 2023, 173-174 (2023). (Co-authored) 2023
Papers
Photocatalytic Activity Enhancement of Titanium Dioxide Nanoparticles via High-Pressure Annealing with Polyethylene Glycol Proceedings of International Symposium of Dry Process 2023, 155-156 (2023). (Co-authored) 2023
Papers
Photocatalytic Activity of g-C3N4 Nanosheets Grown by High-Pressure Annealing Proceedings of International Symposium of Dry Process 2023, 157-158 (2023). (Co-authored) 2023
Papers
Experimental Investigation of Oxygen-Vacancy Defects in n-Type b-Ga2O3 (010) Single Crystals 中部大学 総合工学 33, p.1-8 (2021). (Co-authored) 2021
Papers
Nonequilibrium Atmospheric-Pressure O2 Plasma-Assisted Annealing Effect on Photocatalytic Activity of Anatase/Rutile-Mixed Phase TiO2 Nanoparticles Proceedings of International Symposium of Dry Process 2021, 131-132 (2021). (Co-authored) 2021
Papers
Photobactericidal Activity of Anatase Titanium Dioxide Nanoparticles Annealed with the Assistance of Nonequilibrium Atmospheric-Pressure Oxygen Plasma Proceedings of International Symposium of Dry Process 2021, 127-128 (2021). (Co-authored) 2021
Papers
Photocatalytic Activity Enhancement of Anatase/Rutile-Mixed Phase TiO2 Nanoparticles Annealed with Low-Temperature O2 Plasma Physca Status Solidi A 218, 2100536 (2021). (Co-authored) 2021
Papers
Effects of air-based nonequilibrium atmospheric pressure plasma jet treatment on characteristics of polypropylene film surfaces Applied Surface Science 509, 144910 (2020). (Co-authored) 2020
Papers
Effects of nonequilibrium atmospheric-pressure O2 plasma-assisted annealing on anatase TiO2 nanoparticles Applied Surface Science 526, 146684, (2020). (Co-authored) 2020
Papers
Characterisation of defects in p-type 4H-, 6H- and 3C-SiC epilayers grown on SiC substrates Materials Letters 254, 96–98 (2019). (Co-authored) 2019
Papers
Effects of ultraviolet wavelength and intensity on AlGaN thin film surfaces irradiated simultaneously with CF4 plasma and ultraviolet Vacuum 159, 45-50 (2019). (Co-authored) 2019
Papers
Photocatalytic Characteristics of Au/TiO2/Au Nanostructure Induced by Ultraviolet Irradiation Proceedings of 15th International Symposium of Sputtering & Plasma Processes, 146-148 (2019). (Co-authored) 2019
Papers
Visible-blind wide-dynamic-range fast-response self-powered ultravioletphotodetector based on CuI/In-Ga-Zn-O heterojunction Applied Materials Today 15, 153–162 (2019). (Co-authored) 2019
Papers
Characteristics of TiO2 thin films surfaces treated by O2 plasma in dielectric barrier discharge with the assistance of external heating Vacuum 152,pp.265-271 (Co-authored) 2018/06/01
Papers
Deep-level defects in homoepitaxial p -type GaN Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 36 (2) (Sole-authored) 2018/03/01
Papers
Effect of Atmospheric-Pressure O2 Plasma-Assisted Annealing on Photocatalytic Activity of TiO2 Nanoparticles Proceedings of International Symposium of Dry Process 2018, 255-256 (2018). (Co-authored) 2018
Papers
Hydrophilic Modification of Polypropylene Film Surfaces Treated by Atmospheric-Pressure Air Plasma Jet Proceedings of International Symposium of Dry Process 2018, 253-254 (2018). (Co-authored) 2018
Papers
Characteristics of N-2 and O-2 Plasma-Induced Damages on AlGaN Thin Film Surfaces PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 214 (11) (Co-authored) 2017/11
Papers
Generation of electrical damage in n-GaN films following treatment in a CF Appl. Phys. Express 10 (11) (Co-authored) 2017/10/13
Papers
AlGaN surfaces etched by CF4 plasma with and without the assistance of near-ultraviolet irradiation VACUUM 136,pp.28-35 (Co-authored) 2017/02
Papers
Deep-level defects related to the emissive pits in thick InGaN films on GaN template and bulk substrates APL MATERIALS 5 (1) (Co-authored) 2017/01
Papers
Electrical Characterization of beta-Ga2O3 Single Crystal Substrates ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY 6 (9),pp.P615-P617 (Sole-authored) 2017
Papers
Electrical Investigation of Turn-On Capacitance Recovery Characteristics in Carbon-Doped AlGaN/GaN Hetero-Structures Grown on Si Substrates ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY 6 (12),pp.P828-P831 (Co-authored) 2017
Papers
TiO2 Thin Film Surfaces Treated by O2 Plasma in Dielectric Barrier Discharge with Assistance of Heat Treatment Proceedings of 14th International Symposium of Sputtering & Plasma Processes, 274-277 (2017). (Co-authored) 2017
Papers
Damage characteristics of n-GaN crystal etched with N2 plasma by soft x-ray absorption spectroscopy e-Journal of Surface Science and Nanotechnology 14, 9-13 (2016). 14,pp.9-13 (Co-authored) 2016/01/23
Papers
Damage Evolution of Gallium Nitride in Argon-Chlorine Plasma Proceedings of International Symposium of Dry Process 2016, 85-86 (2016). (Co-authored) 2016
Papers
Effect of Ultraviolet Light-Assisted CF4 Plasma Irradiation on AlGaN Thin Film Surface Proceedings of the 43rd International Symposium on Compound Semiconductors (ISCS2016), MoP-ISCS-096_1-MoP-ISCS-096_2, (2016). (Co-authored) 2016
Papers
Effect of Ultraviolet Light-Assisted CF4 Plasma Irradiationon AlGaN Thin Film Surface 2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS) (Co-authored) 2016
Papers
Electrical Damage Investigation of n-GaN Films Treated by CF4 Plasma 2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS) 36 (0) (Co-authored) 2016
Papers
Electrical Damage Investigation of n-GaN Films Treated by CF4 Plasma Proceedings of the 43rd International Symposium on Compound Semiconductors (ISCS2016), MoP-ISCS-LN-4_1-MoP-ISCS-LN-4_2, (2016). (Co-authored) 2016
Papers
Surface Structure Analysis of AlGaN thin films damaged by Oxygen and Nitrogen Plasmas Laboratory of Advanced Science and Technology for Industry (LASTI) Annual Report, University of Hyogo, Vol.18, p.50-52 (2016). (Co-authored) 2016
Papers
Comparison between AlGaN surfaces etched by carbon tetrafluoride and argon plasmas: Effect of the fluorine impurities incorporated in the surface VACUUM 119,pp.264-269 (Co-authored) 2015/09
Papers
Ar+-irradiation-induced damage in hydride vapor-phase epitaxy GaN films JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 33 (4) (Co-authored) 2015/07
Papers
Deep-level defects and turn-on capacitance recovery characteristics in AlGaN/GaN heterostructures PHILOSOPHICAL MAGAZINE LETTERS 95 (6),pp.333-339 (Co-authored) 2015/06
Papers
Improvement of strained InGaN solar cell performance with a heavily doped n(+)-GaN substrate PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 212 (5),pp.1033-1038 (Co-authored) 2015/05
Papers
Recovery of x-ray absorption spectral profile in etched TiO2 thin films JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 33 (3) (Co-authored) 2015/05
Papers
A comparative study on GaN luminescence under/after inductively coupled plasma exposure PHILOSOPHICAL MAGAZINE LETTERS 95 (3),pp.161-167 (Co-authored) 2015/03
Papers
Anatase TiO2 Thin Films Grown by Facing-Target Reactive Sputtering and Its Impact on Photocatalytic Activity Proceedings of International Symposium of Dry Process 2015, 125-126 (2015). (Co-authored) 2015
Papers
Comparison between Surface Characteristics of Titanium Oxide Thin Films Treated with N2 Dielectric Barrier Discharge Plasma and Annealed in N2 Gas Proceedings of 13th International Symposium of Sputtering & Plasma Processes, 63-66 (2015). (Co-authored) 2015
Papers
Effect of Ultraviolet Light-Assisted CF4 Plasma Irradiation on AlGaN Thin Film Surface Laboratory of Advanced Science and Technology for Industry (LASTI) Annual Report, University of Hyogo, Vol.17, p.67-68 (2015). (Co-authored) 2015
Papers
Electrical Investigation of Deep-Level Defects Introduced in AlGaN/GaN Heterostructures by CF4 Plasma Treatments ECS SOLID STATE LETTERS 4 (4),pp.P36-P38 (Co-authored) 2015
Papers
Surface analysis of AlGaN treated with CF4and Ar plasma etching e-Journal of Surface Science and Nanotechnology 13 (0),pp.481-487 (Co-authored) 2015
Papers
In situ measurement of GaN film photoluminescence under plasma etching PHILOSOPHICAL MAGAZINE LETTERS 94 (12),pp.772-778 (Co-authored) 2014/12
Papers
Damage characteristics of n-GaN thin film surfaces etched by ultraviolet light-assisted helium plasmas THIN SOLID FILMS 570,pp.81-86 (Co-authored) 2014/11
Papers
Optical and electrical investigation of Ar+-irradiated GaN APPLIED PHYSICS EXPRESS 7 (11) (Co-authored) 2014/11
Papers
光触媒を利用した人工光合成研究の最新動向 5 二酸化炭素の光還元を目指した可視光応答性半導体の創製 電気化学および工業物理化学,pp.502-506 (Co-authored) 2014/06/05
Papers
Electrical Characterization of Thick InGaN Films Grown by MOCVD for Photovoltaic Applications 中部大学 総合工学 26, 1-7 (2014). 26,pp.1-7 (Sole-authored) 2014/03
Papers
Photoluminescence of n-type GaN film in an argon plasma PHILOSOPHICAL MAGAZINE LETTERS 94 (3),pp.182-187 (Co-authored) 2014/03
Papers
In situ monitoring of GaN substrate surface in ICP containing energetic electrons APPLIED SURFACE SCIENCE 292,pp.387-389 (Co-authored) 2014/02
Papers
AlGaN/GaNヘテロ構造における炭素関連の欠陥準位評価 格子欠陥フォーラム講演概要集,pp.6-13 (Sole-authored) 2014
Papers
Carbon-related deep-level defects and turn-on recovery characteristics in AlGaN/GaN hetero-structures Materials Research Society Symposium Proceedings 1635, MRSF13-1635-T02-08 (2014). 1635 (Co-authored) 2014
Papers
Cooling Effect on a Gallium Nitride Film Exposed in Argon Plasma 電気学会プラズマ研究会資料 49-52.54-57, 29-33 (2014). (Co-authored) 2014
Papers
Effect of Liquid Nitrogen Cooling on GaN Film Exposed in Low Pressure Plasma Proceedings of International Symposium of Dry Process 2014, pp.67-68 (2014). (Co-authored) 2014
Papers
Electrical characterization of thick InGaN films for photovoltaic applications Materials Research Society Symposium Proceedings 1635, MRSF13-1635-T06-02 (2014). 1635 (Co-authored) 2014
Papers
Morphological and Compositional Changes in AlGaN Surfaces Etched by RF Capacitively Coupled Carbon Tetrafluoride and Argon Plasmas Proceedings of International Symposium of Dry Process 2014, pp.69-70 (2014). (Co-authored) 2014
Papers
Comparison between Damage Characteristics of p- and n-GaN Surfaces Etched by Capacitively Coupled Radio Frequency Argon Plasmas JAPANESE JOURNAL OF APPLIED PHYSICS 52 (5) (Co-authored) 2013/05
Papers
Etching damage and its recovery by soft X-ray irradiation observed in soft X-ray absorption spectra of TiO2 thin film Journal of Applied Physics 113 (12) (Co-authored) 2013/03/28
Papers
Carbon-Related Deep-Level Defects and Turn-On Recovery Characteristics in AlGaN/GaN Hetero-Structures Grown by MOCVD 総合工学 25,pp.13-20 (Sole-authored) 2013/03
Papers
Fabrication of transparent conducting polymer/GaN Schottky junction for deep level defect evaluation under light irradiation PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 210 (3),pp.470-473 (Co-authored) 2013/03
Papers
Damage Analysis of n-GaN Crystal Etched with He and N-2 Plasmas JAPANESE JOURNAL OF APPLIED PHYSICS 52 (1) (Co-authored) 2013/01
Papers
Characteristics of TiO2 Surfaces Etched by Capacitively Coupled Radio Frequency N2 and He Plasmas Journal of Physics: Conference Series 441, 012038 (2013). (Co-authored) 2013
Papers
Damage characteristics of n-GaN thin film surfaces etched by N-2 plasmas PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 11 10 (11),pp.1553-1556 (Co-authored) 2013
Papers
Effect of UV Irradiation on Ar-Plasma Etching Characteristics of GaN ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY 2 (3),pp.P110-P113 (Co-authored) 2013
Papers
Study of Defect Levels in the Band Gap for a Thick InGaN Film JAPANESE JOURNAL OF APPLIED PHYSICS 51 (12) (Co-authored) 2012/12
Papers
Correlation between deep-level defects and turn-on recovery characteristics in AlGaN/GaN hetero-structures JOURNAL OF APPLIED PHYSICS 112 (10) (Co-authored) 2012/11
Papers
In-situ photoluminescence monitoring of GaN in plasma exposure APPLIED PHYSICS LETTERS 101 (7) (Co-authored) 2012/08
Papers
In situ Probe of GaN Film Surfaces under Plasma Conditions by Photoluminescence Technique APPLIED PHYSICS EXPRESS 5 (7) (Co-authored) 2012/07
Papers
Photoluminescence Study of Plasma Etching-Induced Damage in GaN 中部大学 総合工学 24, 78-83 (2012). 24,pp.78-83 (Sole-authored) 2012/03
Papers
Correlation between Deep-Level Defects and Carrie Trapping in AlGaN/GaN Hetero-Structures 11th International Symposium on Advanced Technology Proceedings 107-108 (2012). /invited/ (Sole-authored) 2012
Papers
Damage Analysis of n-GaN Etched with He and N2 Plasmas Laboratory of Advanced Science and Technology for Industry (LASTI) Annual Report, University of Hyogo, Vol.13, 51-52 (2012). (Co-authored) 2012
Papers
Damage Characteristics of p-GaN Surfaces Etched by Capacitively Coupled Radio Frequency Argon Plasmas Proceedings of International Symposium of Dry Process 2012, 133-134 (2012). (Co-authored) 2012
Papers
Effect of Carbon Impurity Incorporation on Band-Gap States in AlGaN/GaN Hetero-Structures ELECTROCHEMICAL AND SOLID STATE LETTERS 15 (2),pp.H44-H46 (Co-authored) 2012
Papers
Investigation of band-gap states in AlGaN/GaN hetero-structures with different growth conditions of GaN buffer layers Materials Research Society Symposium Proceedings 1396, 1396-o07-37 1-6 (2012). 1396,pp.243-248 (Co-authored) 2012
Papers
Photoluminescence study of damage introduced in GaN by Ar- and Kr-plasmas etching Materials Research Society Symposium Proceedings 1396, 1396-o07-36 1-6 (2012). 1396,pp.205-210 (Co-authored) 2012
Papers
Potential of III-V Nitride Films for the Application to Photovoltaic Device 11th International Symposium on Advanced Technology Proceedings 109-110 (2012). /invited/ (Co-authored) 2012
Papers
Correlation between Current Collapse Phenomena and Deep-Level Defects in AlGaN/GaN Hetero-Structures Probed by Deep-Level Optical Spectroscopy 総合工学 23,pp.16-21 (Sole-authored) 2011/03
Papers
Photocapacitance spectroscopy study of deep-level defects in freestanding n-GaN substrates using transparent conductive polymer Schottky contacts JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 29 (2) (Co-authored) 2011/03
Papers
Deep-Level Characterization of n-GaN Epitaxial Layers Using Transparent Conductive Polyaniline Schottky Contacts JAPANESE JOURNAL OF APPLIED PHYSICS 50 (1) (Co-authored) 2011/01
Papers
Observation of Optical Fluorescence of GaN Thin Films in an Inductively-Coupled Plasma Containing High Energy Electrons JAPANESE JOURNAL OF APPLIED PHYSICS 50 (1) (Co-authored) 2011/01
Papers
π-Conjugated polymer/GaN Schottky solar cells SOLAR ENERGY MATERIALS AND SOLAR CELLS 95 (1),pp.284-287 (Co-authored) 2011/01
Papers
Correlation between deep-level defects and current collapses in AlGaN/GaN hetero-structures probed by steady-state photo-capacitance spectroscopy Materials Research Society Symposium Proceedings 1309, 1309-ee06-40 1-6 (2011). 1309,pp.101-106 (Co-authored) 2011
Papers
Deep-level characterization of free-standing HVPE-grown GaN substrates using transparent conductive polyaniline schottky contacts Materials Research Society Symposium Proceedings 1309, 1309-ee06-41 1-6 (2011). 1309,pp.107-112 (Co-authored) 2011
Papers
Photocapacitance spectroscopy study of deep-level defects in freestanding n -GaN substrates using transparent conductive polymer Schottky contacts Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics 29 (2) (Co-authored) 2011
Papers
HETEROINTERFACE PROPERTIES OF NOVEL HYBRID SOLAR CELLS CONSISTING OF TRANSPARENT CONDUCTIVE POLYMERS AND III-NITRIDE SEMICONDUCTOR JOURNAL OF NONLINEAR OPTICAL PHYSICS & MATERIALS 19 (4),pp.703-711 (Co-authored) 2010/12
Papers
Photo-capacitance spectroscopy investigation of deep-level defects in AlGaN/GaN hetero-structures with different current collapses PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 4 (12),pp.374-376 (Co-authored) 2010/12
Papers
Intrinsic Degradation in Alq3-Based OLEDs Probed by Deep-Level Optical Spectroscopy 総合工学 22,pp.23-29 (Sole-authored) 2010/03
Papers
Anomalous capacitance-voltage characteristics of Pt-AlGaN/GaN Schottky diodes exposed to hydrogenA physica status solidi (c) 7, 1928-1930 (2010). 7 (7-8) (Co-authored) 2010
Papers
Band Gap States in AlGaN/GaN Hetero-Interface Studied by Deep-Level Optical Spectroscopy Materials Research Society Symposium Proceedings Vol.1202, 1202-I09-03 (2010). (Co-authored) 2010
Papers
Correlation between Current Collapse Phenomena and Deep-Level Defects in AlGaN/GaN Hetero-Structures Probed by Deep-Level Optical Spectroscopy 中部大学 総合工学 23, 16-21 (2011). (Sole-authored) 2010
Papers
Electrical characterization of n-GaN epilayers using transparent polyaniline Schottky contacts physica status solidi (c) 7, 2007-2009 (2010). 7 (7-8) (Co-authored) 2010
Papers
Intrinsic Degradation in Alq3-Based OLEDs Probed by Deep-Level Optical Spectroscopy Materials Research Society Symposium Proceedings Vol.1212, 1212-S03-01 (2010). (Sole-authored) 2010
Papers
Nitrogen-Doping Induced Optical Bandgap Widening of P-Type Cu2O Films Materials Research Society Symposium Proceedings Vol.1217, 1217-Y03-38 (2010). (Co-authored) 2010
Papers
Low-frequency capacitance-voltage study of hydrogen interaction with Pt-AlGaN/GaN Schottky barrier diodes PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 3 (7-8),pp.266-268 (Co-authored) 2009/10
Papers
Deep-Level Optical Spectroscopy Investigation of Degradation Phenomena in Tris(8-hydroxyquinoline) Aluminum-Based Organic Light-Emitting Diodes APPLIED PHYSICS EXPRESS 2 (9) (Sole-authored) 2009/09
Papers
Deep-Level Optical Spectroscopy Investigation of Emissive Interface States in Organic Light-Emitting Diodes 中部大学総合工学研究所総合工学,pp.151-154 (Sole-authored) 2009/03/01
Papers
Optical bandgap widening of p-type Cu2O films by nitrogen doping APPLIED PHYSICS LETTERS 94 (2) (Co-authored) 2009/01
Papers
Deep-level optical spectroscopy investigation of band gap states in AlGaN/GaN hetero-interfaces APPLIED PHYSICS EXPRESS 1 (9) (Co-authored) 2008/09
Papers
Emissive interface states in organic light-emitting diodes based on tris(8-hydroxyquinoline) aluminum JAPANESE JOURNAL OF APPLIED PHYSICS 47 (1),pp.464-467 (Co-authored) 2008/01
Papers
Deep-level characterization of emissive interface states in Alq(3)-based OLEDs PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 1 (5),pp.196-198 (Co-authored) 2007/10
Papers
Origin of visible-light sensitivity in N-doped TiO2 films CHEMICAL PHYSICS 339 (1-3),pp.20-26 (Co-authored) 2007/10
Papers
Deep-level characterization of tris(8-hydroxyquinoline) aluminum with and without quinacridone doping JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 46 (4B),pp.2636-2639 (Co-authored) 2007/04
Papers
Development of Visible Light Photocatalysts using Nitrogen Doped Titanium Dioxides 豊田自動織機技報,pp.46-51 (Co-authored) 2007/02
Papers
Deep-Level Characterization of Tris(8-Hydroxyquinoline) Aluminum with and without Quinacridone Doping Materials Research Society Symposium Proceedings Volume 965E, S09-21 (2007). (Co-authored) 2007
Papers
Visible-light sensitivity in N-doped ZnO films prepared by reactive magnetron sputtering Materials Research Society Symposium Proceedings Volume 957, K07-57 (2007). 957,pp.289-+ (Co-authored) 2007
Papers
Trap levels in tris(8-hydroxyquinoline) aluminum studied by deep-level optical spectroscopy APPLIED PHYSICS LETTERS 88 (25) (Co-authored) 2006/06
Papers
Band-gap narrowing of TiO2 films induced by N-doping Physica B: Condensed Matter 376-377, 823 (2006). 376-377 (1),pp.823-826 (Co-authored) 2006/04/01
Papers
Electrical characterization of p -type N-doped ZnO films prepared by thermal oxidation of sputtered Zn3N2 films Applied Physics Letters 88 (17) (Co-authored) 2006
Papers
Electrical activation characteristics of silicon-implanted GaN JOURNAL OF APPLIED PHYSICS 97 (8) (Co-authored) 2005/04
Papers
Deep-level optical spectroscopy investigation of N-doped TiO2 films Applied Physics Letters 86 (13),pp.1-3 (Co-authored) 2005/03/28
Papers
Deep-level characterization of N-doped ZnO films prepared by reactive magnetron sputtering Applied Physics Letters 87 (23),pp.1-3 (Co-authored) 2005
Papers
Electrical characterization of band gap states in C-doped TiO2 films Applied Physics Letters 87 (5) (Co-authored) 2005
Papers
GaN enhancement mode metal-oxide semiconductor field effect transistors Physica Status Solidi (c) 0, 438 (2002). 2 (7),pp.2668-2671 (Co-authored) 2005
Papers
Effect of p-type activation ambient on acceptor levels in Mg-doped GaN JOURNAL OF APPLIED PHYSICS 96 (1),pp.415-419 (Co-authored) 2004/07
Papers
MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors Applied Physics Letters 84 (15),pp.2919-2921 (Co-authored) 2004/04/12
Papers
Characteristics of Grain Boundaries in Polycrystalline Si Films fabricated by Chemical Vapor Deposition and Subsequent Annealing IEEJ Transactions on Sensors and Micromachines 124 (1),pp.14-20 (Co-authored) 2004
Papers
Defects in N/Ge and N/Si Co-Implanted GaN Materials Science in Semiconductor Processing 6, 515 (2004). (Co-authored) 2004
Papers
High-temperature annealing behavior of p-type doping characteristics in Mg-doped GaN Journal of the Electrochemical Society 151 (9),pp.G574-G577 (Co-authored) 2004
Papers
n-Type doping characteristics of O-implanted AlGaN Journal of the Electrochemical Society 151 (12),pp.G801-G804 (Co-authored) 2004
Papers
Characteristics of SiO2/n-GaN interfaces with beta-Ga2O3 interlayers APPLIED PHYSICS LETTERS 83 (21),pp.4336-4338 (Co-authored) 2003/11
Papers
n-type doping characteristics of O-implanted GaN JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 21 (6),pp.2602-2604 (Co-authored) 2003/11
Papers
N-type implantation doping of GaN MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 6 (5-6),pp.515-517 (Co-authored) 2003/10
Papers
Inversion behavior in thermally oxidized p-GaN metal-oxide-semiconductor capacitors JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 21 (5),pp.2220-2222 (Co-authored) 2003/09
Papers
Electrical characterization Of SiO2/n-GaN metal-insulator-semiconductor diodes JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 21 (4),pp.1364-1368 (Co-authored) 2003/07
Papers
Electrical properties of thermally oxidized p-GaN metal-oxide-semiconductor diodes APPLIED PHYSICS LETTERS 82 (15),pp.2443-2445 (Co-authored) 2003/04
Papers
Effect of Be++O+ coimplantation on Be acceptors in GaN APPLIED PHYSICS LETTERS 82 (13),pp.2082-2084 (Co-authored) 2003/03
Papers
Interface properties of thermally oxidized n-GaN metal-oxide-semiconductor capacitors APPLIED PHYSICS LETTERS 82 (2),pp.218-220 (Co-authored) 2003/01
Papers
Electrical properties of SiO2/n-GaN metal-insulator- semiconductor structures PHYSICA STATUS SOLIDI B-BASIC RESEARCH 234 (3),pp.859-863 (Co-authored) 2002/12
Papers
Electrical characterization of acceptor levels in Be-implanted GaN APPLIED PHYSICS LETTERS 81 (21),pp.3990-3992 (Co-authored) 2002/11
Papers
Electrical characterization of acceptor levels in Mg-doped GaN JOURNAL OF APPLIED PHYSICS 92 (9),pp.5590-5592 (Co-authored) 2002/11
Papers
Co-implantation of Si+N into GaN for n-type doping JOURNAL OF APPLIED PHYSICS 92 (7),pp.3815-3819 (Co-authored) 2002/10
Papers
Interface properties of SiO2/n-GaN metal-insulator- semiconductor structures APPLIED PHYSICS LETTERS 80 (25),pp.4756-4758 (Co-authored) 2002/06
Papers
N/Ge Co-Implantation into GaN for N-Type Doping Jpn J Appl Phys 41 (4),pp.2522-2527 (Co-authored) 2002/04/30
Papers
Deep level centers in silicon introduced by high-energy He irradiation and subsequent annealing Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 20 (1),pp.379-381 (Co-authored) 2002/01
Papers
Defects in N/Ge coimplanted GaN studied by positron annihilation JOURNAL OF APPLIED PHYSICS 91 (2),pp.884-886 (Co-authored) 2002/01
Papers
Doping characteristics and structural defects in N/Ge co-implanted GaN Institute of Physics Conference Series No.170 Chapter 9 (2002). [CD-ROM] (170),pp.807-812 (Co-authored) 2002
Papers
Electrical properties of acceptor levels in Mg-doped GaN Physica Status Solidi (c) 0, 438 (2002).,pp.438-442 (Co-authored) 2002
Papers
Inversion Behavior in SiO2/n-GaN Metal-Insulator-Semiconductor Structures Physica Status Solidi (b) 234, 859 (2002). (Co-authored) 2002
Papers
Observation of inversion behavior in n-type GaN planar metal-insulator-semiconductor capacitor Solid-State Electronics 46 (9),pp.1467-1469 (Co-authored) 2002
Papers
Structural defects and electrical properties of N/Ge Co-implanted GaN Defect and Diffusion Forum 206, 75-86 (2002). 206-2,pp.75-85 (Co-authored) 2002
Papers
Current deep-level transient spectroscopy investigation of acceptor levels in Mg-doped GaN APPLIED PHYSICS LETTERS 79 (11),pp.1631-1633 (Co-authored) 2001/09
Papers
Effect of N/Ge co-implantation on the Ge activation in GaN APPLIED PHYSICS LETTERS 79 (10),pp.1468-1470 (Co-authored) 2001/09
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Effect of C and B sequential implantation on the B acceptors in 4H-SiC Journal of Applied Physics 89 (11 I),pp.5961-5964 (Co-authored) 2001/06
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Effect of C/B Co-Implantation on the B Acceptors in 4H-SiC Materials Research Society Symposium Proceedings 640 (2001) [CD-ROM]. (Co-authored) 2001
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Effect of C/B sequential implantation on the B acceptors in 4H-SiC Journal of Crystal Growth 210, 283 (2000). 210 (1),pp.283-287 (Co-authored) 2000/03/01
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Thermal behavior of He-irradiation-induced defects in silicon Journal of Crystal Growth 210 (1),pp.80-84 (Co-authored) 2000/03/01
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Formation process of interface states at grain boundaries in sputtered polycrystalline Si films Journal of Materials Research 14 (2),pp.371-376 (Co-authored) 1999
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Surface Defect States of Crystallites in Sputtered Si Films Solid state phenomena 205 (1996). (Co-authored) 1996
Papers
Characterization of interface states in (Sr, Ca) TiO3− x based ceramics by ICTS analysis Journal of materials research 6 (6), 1346-1349 (1991). (Sole-authored) 1991
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Formation of Energy Barrier and VDR Effect by Adsorbed Oxygen of SrTiO3-x Based Multi-Function Ceramics Key Engineering Materials 53, 70-75 (1991). (Co-authored) 1991
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Investigation of interface states in (Sr,Ca)TiO3−x‐based ceramics Journal of applied physics 70 (3), 1539-1547 (1991). (Co-authored) 1991
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OXYGEN ADSORPTION AND VDR EFFECT IN(Sr, Ca) TiO3-x BASED CERAMICS Journal of Materials Research 5 (12), 2910-2922 (1990). 5 (12),pp.2910-2922 (Sole-authored) 1990/12
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Influence of reoxidation on PTC effect of porous BaTiO3 Journal of the Ceramic Society of Japan 98 (8), 879-884 (1990). (Co-authored) 1990
Papers
Effect of Additives on the Electrical Properties and Microstructure of Ceramic Varistors in ZnO-SrO System Journal of the Ceramic Society of Japan 97 (1130), 1232-1238 97 (10),pp.1232-1238 (Co-authored) 1989