教員情報 - 石井　清

イシイ　キヨシ ISHII Kiyoshi
石井　清

所属工学部電気電子システム工学科

大学院工学研究科電気電子工学専攻

職名教授

著書・論文歴
著書	New Inter University Electric Circuits II (共著) 2010
著書	新インターユニバーシティ電気回路II (共著) 2010
論文	High-Bit-Rate Low-Power Decision Circuit Using InP-InGaAs HBT Technology IEEE J. Solid-State Circuits Vol.40 (No.7) 2005
論文	High-Bit-Rate Low-Power Decision Circuit Using InP-InGaAs HBT Technology IEEE J. Solid-State Circuits Vol.40 (No.7) 2005
論文	Recent progress in 40- to 100-Gbit/s-class optical communication ICs using InP-based HBT technologies International Journal of High Speed Electronics and Systems Vol.15 (No.3) 2005
論文	Recent progress in 40- to 100-Gbit/s-class optical communication ICs using InP-based HBT technologies International Journal of High Speed Electronics and Systems Vol.15 (No.3) 2005
論文	90 Gbit/s 0.5 W decision circuit using InP/InGaAs double heterojunction bipolar transistors IEE Electron. Lett. Vol.40 (No.16) 2004
論文	90 Gbit/s 0.5 W decision circuit using InP/InGaAs double heterojunction bipolar transistors IEE Electron. Lett. Vol.40 (No.16) 2004
論文	3.21 ps ECL gate using InP/InGaAs DHBT technology IEE Electron. Lett. Vol.39 (No.20) 2003
論文	3.21 ps ECL gate using InP/InGaAs DHBT technology IEE Electron. Lett. Vol.39 (No.20) 2003
論文	4-bit Multiplexer/Demultiplexer Chip Set for 40-Gbit/s Optical Communication Systems IEEE Transactions on Microwave Theory and Techniques Vol.51 (No.11) 2003
論文	4-bit Multiplexer/Demultiplexer Chip Set for 40-Gbit/s Optical Communication Systems IEEE Transactions on Microwave Theory and Techniques Vol.51 (No.11) 2003
論文	Over 40 Gbit/s 16:1 multiplexer IC using InP/InGaAs HBT IEE Electron. Lett. Vol.39 (No.12) 2003
論文	Over 40 Gbit/s 16:1 multiplexer IC using InP/InGaAs HBT IEE Electron. Lett. Vol.39 (No.12) 2003
論文	A Jitter Suppression Technique for a 2.48832-Gb/s Clock and Data Recovery Circuit IEEE Transactions on Circuits and Systems II. Vol.49 (No.4) 2002
論文	A Jitter Suppression Technique for a 2.48832-Gb/s Clock and Data Recovery Circuit IEEE Transactions on Circuits and Systems II. Vol.49 (No.4) 2002
論文	High-Input-Sensitivity, Low-Power 43 Gbit/s Decision Circuit using InP/InGaAs Double-heterojunction Bipolar Transistors IEE Electron, Lett. Vol.38 (No.12) 2002
論文	High-Input-Sensitivity, Low-Power 43 Gbit/s Decision Circuit using InP/InGaAs Double-heterojunction Bipolar Transistors IEE Electron, Lett. Vol.38 (No.12) 2002
論文	Low-power 1:16 DEMUX and One-Chip CDR With 1:4 DEMUX Using InP-InGaAs Heterojunction Bipolar Transistors IEEE J. Solid-State Circuits Vol.37 (No.9) 2002
論文	Low-power 1:16 DEMUX and One-Chip CDR With 1:4 DEMUX Using InP-InGaAs Heterojunction Bipolar Transistors IEEE J. Solid-State Circuits Vol.37 (No.9) 2002
論文	Very-High-Speed Selector IC using InP/InGaAs Heterojunction Bipolar Transistors IEE Electron. Lett. Vol.38 (No.10) 2002
論文	Very-High-Speed Selector IC using InP/InGaAs Heterojunction Bipolar Transistors IEE Electron. Lett. Vol.38 (No.10) 2002
論文	A Jitter Suppression Technique for a Clock Multiplier IEICE Trans. Electron. vol. E-83-C (No.4) 2000
論文	A Jitter Suppression Technique for a Clock Multiplier IEICE Trans. Electron. vol. E-83-C (No.4) 2000
論文	Very-High-Speed Si Bipolar Static Frequency Dividers with New T-Type Flip-Flops IEEE J. Solid-State Circuits Vol.30 (No.1) 1995
論文	Very-High-Speed Si Bipolar Static Frequency Dividers with New T-Type Flip-Flops IEEE J. Solid-State Circuits Vol.30 (No.1) 1995
論文	High-Bit-Rate, High-Input-Sensitivity Decision Circuit Using Si Bipolar Technology IEEE J. Solid-State Circuits Vol.29 (No.5) 1994
論文	High-Bit-Rate, High-Input-Sensitivity Decision Circuit Using Si Bipolar Technology IEEE J. Solid-State Circuits Vol.29 (No.5) 1994
論文	Maximum Operating Frequency in Si Bipolar Master-Slave Toggle Flip-Flop Circuit IEEE J. Solid-State Circuits Vol.29 (No.7) 1994
論文	Maximum Operating Frequency in Si Bipolar Master-Slave Toggle Flip-Flop Circuit IEEE J. Solid-State Circuits Vol.29 (No.7) 1994
論文	Sub-100-nm-Scale Patterning Using a Low-Energy Electron Beam Jpn. J. Appl. Phys.L744. 31 1992
論文	Sub-100-nm-Scale Patterning Using a Low-Energy Electron Beam Jpn. J. Appl. Phys.L744. 31 1992
論文	Very-Low-Energy Electron Beam Lithography Using a Retarding Field Jpn. J. Appl. Phys. 2212. 29 1990
論文	Very-Low-Energy Electron Beam Lithography Using a Retarding Field Jpn. J. Appl. Phys. 2212. 29 1990
論文	The Interfacial Characteristics of MIS Structures Using Carbon Films as Insulator The Transactions of The IECE of JAPAN Vol.E69 (No.4) 1986
論文	The Interfacial Characteristics of MIS Structures Using Carbon Films as Insulator The Transactions of The IECE of JAPAN Vol. E69 (No.4) 1986